Direct Intermediate Regulation Enabled by Sulfur Containers in Working Lithium–Sulfur Batteries

Polysulfide intermediates (PSs), the liquid-phase species of active materials in lithium–sulfur (Li-S) batteries, connect the electrochemical reactions between insulative solid sulfur and lithium sulfide and are key to full exertion of the high-energy-density Li-S system. Herein, the concept of sulfur container additives is proposed for the direct modification on the PSs species. By reversible storage and release of the sulfur species, the container molecule converts small PSs into large organosulfur species. The prototype di(tri)sulfide-polyethylene glycol sulfur container is highly efficient in the reversible PS transformation to multiply affect electrochemical behaviors of sulfur cathodes in terms of liquid-species clustering, reaction kinetics, and solid deposition. The stability and capacity of Li-S cells was thereby enhanced. The sulfur container is a strategy to directly modify PSs, enlightening the precise regulation on Li-S batteries and multi-phase electrochemical systems.     

氢化丁苯共聚物结构的核磁共振波谱表征Ⅱ.微观结构的定量计算

在氢化丁苯共聚物¹³C-NMR谱脂肪碳部分谱带归属的基础上,根据各谱带的主要来源,推导出六个二单元浓度的计算公式。计算出二单元、一单元的相对含量,各结构单元的数均序列长度、嵌段含量和其它结构参数。加氢前后的¹H-和¹³C-NMR谱的组成计算结果基本一致。初步探讨了作为粘度指数改进剂的氢化丁苯共聚物微观结构与性能的关系,为合成提供了依据。     

Equivalence of variational inequality problems to unconstrained minimization

In this paper we propose a class of merit functions for variational inequality problems (VI). Through these merit functions, the variational inequality problem is cast as unconstrained minimization problem. We estimate the growth rate of these merit functions and give conditions under which the stationary points of these functions are the solutions of VI. This work was supported by the state key project “Scientific and Engineering Computing”.     

Recursive partition and amalgamation with the exponential family: Theory and applications

The theory of tree-growing (RECPAM approach) is developed for outcome variables which are distributed as the canonical exponential family. The general RECPAM approach (consisting of three steps: recursive partition, pruning and amalgamation), is reviewed. This is seen as constructing a partition with maximal information content about a parameter to be predicted, followed by simplification by the elimination of ‘negligible’ information. The measure of information is defined for an exponential family outcome as a deviance difference, and appropriate modifications of pruning and amalgamation rules are discussed. It is further shown how the proposed approach makes it possible to develop tree-growing for situations usually treated by generalized linear models (GLIM). In particular, Poisson and logistic regression can be tree-structured. Moreover, censored survival data can be treated, as in GLIM, by observing a formal equivalence of the likelihood under random censoring and an appropriate Poisson model. Three examples are given of application to Poisson, binary and censored survival data.     

自旋-轨道耦合系统中的自旋流定义

通常的自旋流定义在描述自旋-轨道耦合系统中的自旋输运是不完整的与非物理的。文章作者提出在这类系统中自旋流的恰当定义。新定义的自旋流克服了通常定义下的本质缺点，可通过实验直接观测。     

镧系金属一氢化物有效芯势研究

采用Cundari和Stevens等推导的有效芯势对镧系金属一氢化物进行了理论计算，以探讨镧系金属元素与氢的相互作用。结果表明所有镧系金属一氢化物基态时理论上是稳定的，最稳定的是SmH,最不稳定的是DyH;键长计算结果显示，基态时镧系金属一招兵买马花物有独立王国 收缩现象发生；红外振动频率理论计算值与实验结果一致；成键轨道中，金属原子轨道的贡献主要是s轨道和d轨道：从CeH至ErH(GdH)例外）随着外层电子的增加s轨道成分逐渐增大d轨道成分逐渐减小；从TmH和LuH（包括GdH)，成键轨道中金属原子轨道的贡献主要是d轨道，约为90％；约大多数镧系金属一氧化物的成键轨道中金属原子轨道f成分小于1％。     

P schl-Teller势阱中线性与非线性光学折射率变化

利用量子力学中的密度矩阵算符理论导出了P schl-Teller势阱中的线性与三阶非线性光学折射率的解析表达式。P schl-Teller势阱中有两个可调参数κ和λ,势阱的形状及其非对称性会随势阱参数的取值不同而明显不同,从而其线性与非线性光学折射率变化的大小也会随势阱参数和入射光强的变化而呈规律性的变化。文章以典型的GaAs/AlGaAs势阱为例作了数值计算,数值计算结果表明,势阱的形状和入射光强对光学折射率有着重要的影响。     

非对称量子阱中非线性光学吸收系数的计算

非对称量子阱中的非线性光学效应因其潜在的实用价值而引起人们的广泛关注,而量子阱内带间的光学吸收问题对研究远红外光学探测器件具有重要的理论指导意义.以Pschl-Teller势阱为例研究了影响非对称量子阱中的非线性光学吸收系数的因素.考虑到带间的电子弛豫,用量子力学中的密度矩阵算符理论导出了Pschl-Teller势阱中的线性与三阶非线性光学吸收系数的表达式.因该势阱中有两个可调参数,通过调节系统的参数,发现该系统的非线性光学吸收系数呈规律性的变化.以典型的GaAs/AlGaAs非对称量子阱为例作了数值计算,通过调节系统的参数,数值计算结果表明,入射光强以及系统的非对称性对量子阱的非线性光学吸收系数有较大的影响,从而为实验上研究非对称量子阱的非线性光学效应提供了必要的理论依据.     

CsI(Tl)晶体中反冲Cs和I核Quenching?Factor的测量

许多实验对用CsI(Tl)闪烁晶体作为探测器来寻找和探测暗物质的可行性进行了研究.本工作利用8MeV单能中子轰击CsI(Tl)晶体探测器来研究Cs核和I核的QuenchingFactor.在数据处理中,运用脉冲形状甄别(PSD)方法来分辨反冲核信号和本底信号.实验结果表明,在7keV到132keV的能区中,Quench ingFactor随着反冲核能量的减少而增加.在探测暗物质的实验中,这一性质对于CsI(Tl)晶体探测器获得较低的能量阈值是很有利的.